Intel, Numonyx claims key breakthrough in memory research

Intel and Numonyx have announced a significant milestone in the development of phase change memory, or PCM. Their researchers say they have successfully stacked multiple layers of PCM arrays in a single 64 megabit die. PCM's use of heat on chalcogenide glass translates to lesser voltage required to store and read memory. This will allow PCM to achieve much higher memory capacities in the future when compared to NAND flash memory.

The largest advantage over NAND flash memory technology though, could well be its longevity. According to Rob Enderle, principal analyst at the Enderle group, "PCM has a shelf life of about 300 years and wears out much more slowly than flash memory, so it can be reused more often."

For more on this story:
- check out this article at InformationWeek
- check out this article at Ars Technica

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