American and South Korean Scientists have fabricated a memory device that combines silicon nanowires with a more traditional type of data-storage. ZeeNews reports that this new hybrid structure may be more reliable than other nanowire-based memory devices built recently, and could be easily integrated into commercial products. The device is a type of "non-volatile" memory, like flash memory, which is widely used in digital camera memory cards and USB memory sticks. What's more, stored information is not lost when the device is without power. Nanowires are integrated with a higher-end type of non-volatile memory that is similar to flash, a layered structure known as Semiconductor-Oxide-Nitride-Oxide-Semiconductor (SONOS) technology.

For more on the new storage technology:
- see this ZeeNews article