Samsung and Sun Microsystems announced Tuesday that they have co-developed a new 8-GB single-level-cell (SLC) flash memory for use in solid-state drives (SSD). According to the companies, the new memory gives a five-fold increase in terms of the number of write-and-erase cycles over current products available on the market today. What is so unique here is that the breakthrough is implemented at the level of the flash chips themselves, with no changes necessary in the controller. With the market for SSD projected to reach as many as 2.2 million solid state drives by 2012, it is not hard to see why everyone is eager for a slice of the pie. In fact, Sun has earlier said it expects to offer flash drives as an option across the range of its servers and storage.
For more about the report:
- check out this InformationWeek article [1]
Links:
[1] http://www.informationweek.com/news/storage/systems/showArticle.jhtml?articleID=209100790